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parameter typ. max. units r ja maximum junction-to-ambient 75 100
hexfet power mosfet these n-channel mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 ? , is ideal for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available. thermal resistance v dss = 20v r ds(on) = 0.045 ultra low on-resistance n-channel mosfet sot-23 footprint low profile (<1.1mm) available in tape and reel fast switching lead-free halogen-free
09/25/12 www.irf.com 1 parameter max. units v ds drain- source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 4.2 i d @ t a = 70c continuous drain current, v gs @ 4.5v 3.4 a i dm pulsed drain current 33 p d @t a = 25c power dissipation 1.25 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c
micro3 ? d s g 3 1 2

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) pulse width 300 s; duty cycle surface mounted on fr-4 board, t
s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.01 ??? v/c r ds(on) static drain-to-source on-resistance ??? 0.035 0.045 ??? 0.050 0.080 v gs(th) gate threshold voltage 0.60 ??? 1.2 v v gs(th) gate threshold voltage coefficient ??? -3.2 ??? mv/c gfs forward transconductance 5.8 ??? ??? s i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 25 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 q g total gate charge ??? 8.0 12 q gs gate-to-source charge ??? 1.8 2.7 q gd gate-to-drain ("miller") charge ??? 1.7 2.6 t d(on) turn-on delay time ??? 7.5 ??? t r rise time ??? 10 ??? t d(off) turn-off delay time ??? 54 ??? t f fall time ??? 26 ??? c iss input capacitance ??? 740 ??? c oss output capacitance ??? 90 ??? c rss reverse transfer capacitance ??? 66 ??? source-drain rating and characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 16 24 ns q rr reverse recovery charge ??? 8.6 13 nc mosfet symbol na ns a pf nc v ds = 10v v gs = 12v v gs = -12v conditions v gs = 0v, i d = 250ua reference to 25c, i d = 1.0ma v gs = 4.5v, i d = 4.2a ??? ??? 33 ??? ??? 1.3 conditions r d = 10 ? = 1.0mhz t j = 25c, i f = 1.3a di/dt = 100a/ s t j = 25c, i s = 1.3a, v gs = 0v showing the integral reverse p-n junction diode. r g = 6 v ds = 10v, i d = 4.0a v ds = 16v, v gs = 0v, t j = 70c a v gs = 5.0v i d = 1.0a v gs = 0v v ds = 15v i d = 4.0a v ds = v gs , i d = 250 a v gs = 2.5v, i d = 3.6a v ds = 16v, v gs = 0v v dd = 10v

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 4.0a 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 7.00v 5.00v 4.50v 3.50v 3.00v 2.70v 2.50v 2.25v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.25v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 7.00v 5.00v 4.50v 3.50v 3.00v 2.70v 2.50v 2.25v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.25v 10 100 2.0 2.4 2.8 3.2 3.6 4.0 v = 15v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.0a v = 10v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss

www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

6 www.irf.com fig 12. on-resistance vs. drain current fig 11. on-resistance vs. gate voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs, gate -to -source voltage ( v ) 0.02 0.03 0.04 0.05 r d s ( o n ) , d r a i n - t o - s o u r c e v o l t a g e ( ) id = 4.0a 0 10203040 i d , drain current ( a ) 0.00 0.10 0.20 0.30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) vgs = 4.5v vgs = 2.5v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 0.7 0.9 1.1 1.3 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 50 a id = 250 a fig 13. threshold voltage vs. temperature

www.irf.com 7 micro3 (sot-23/to-236ab) part marking information

e e1 e d a b 0.15 [0.006] e1 1 2 3 m cba 5 6 6 5 notes: b a1 3x a a2 a b c m 0.20 [0.008] 0.10 [0.004] c c 1. dimensioning & tolerancing per ansi y14.5m-1994 2. dimensions are shown in millimeters [inches]. 3. controlling dimension: millimeter. 4. datum plane h is located at the mold parting line. 5. datum a and b to be determined at datum plane h. 6. dimensions d and e1 are measured at datum plane h. dimensions does not include mold protrusions or interlead flash. mold protrusions or interlead flash shall not exceed 0.25 mm [0.010 inch] per side. 7. dimension l is the lead length for soldering to a substrate. 8. outline conforms to jedec outline to-236 ab. 0.89 1.12 symbol max min a1 b 0.01 0.10 c 0.30 0.50 d 0.08 0.20 e 2.80 3.04 e1 2.10 2.64 e 1.20 1.40 a 0.95 bsc l 0.40 0.60 08 millimeters a2 0.88 1.02 e1 1.90 bsc ref 0.54 l1 bsc 0.25 l2 bsc ref

inches 8 0
0.0004 min max
dimensions 0.972 1.900 recommended footprint 0.802 0.950 2.742 3x l c l2 h 4 l1 7 f = irlml6401 a 2001 a 27 notes : this part marking information applies to devices produced after 02/26/2001 lot code lead free dat e code e = irlml6402 x = part number code reference: d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if preceded b y las t digit of calendar year w = (27-52) if preceded by a letter y 8 2008 3 2003 1 2001 ye ar 2002 2 5 2005 2004 4 2007 2006 7 6 2010 0 2009 9 ye ar y c 03 work we e k 01 02 a w b 04 d 24 26 25 x z y work we e k w h = irlml5203 g = irlml2502 k h g f e d c b 2006 2003 2002 2005 2004 2008 2007 2 0 1 0 2009 j 29 28 30 c b d 50 x i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wi r e halogen free part number

8 www.irf.com data and specifications subject to change without notice. ?

2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2012

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